The DC Characteristics of GaAs/AlGaAs Heterojunction Bipolar Transistors with Application to Device Modeling

IEEE Transactions on Electron Devices

Volumn 37, Issue 10, 1990, Pages 2121-2129

  Hafizi, Madjid E ^a   Crowell, Clarence R ^b   Grupen, Matthew E ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--NUMERICAL ANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EBERS-MOLL MODEL;

TRANSISTORS, BIPOLAR;

EID: 0025508937     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.59900     Document Type: Article

References (18)

1. P. M. Asbeck, M. F. Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, and K. C. Wang, “GaAlAs/GaAs heterojunction bipolar transistors: Issues and prospects for application,” IEEE Trans. Electron Devices, vol. 36, pp. 2032–2042, Oct. 1989.
2. B. Jalali, R. N. Nottenberg, Y. K. Chen, D. Sivco, D. A. Humphery, and A. Y. Cho, “High-frequency submicrometer Al48In52As/ In 53Ga47As heterostructure bipolar transistors,” IEEE Electron Device Lett., vol. 10, pp. 391–393, Aug. 1989.
3. J. J. Ebers and J. L. Moll, “Large-signal behavior of junction transistors,” Proc. IRE, vol. 42, pp. 1761–1772, Dec. 1954.
4. H. K. Gummel and H. C. Poon, “An integral charge control model of bipolar transistors,” Bell Syst. Tech. J., vol. 49, pp. 827–852, May 1970.
5. T. H. Ning and D. D. Tang, “Method for determining the emitter and base series resistance of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 409–412, Apr. 1984.
6. A. Neugroschel, “Measurement of the low-current base and emitter resistances of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-34, pp. 817–822, Apr. 1987.
7. I. Getreu, “Modeling the bipolar transistor,” Tektronix Inc., Beaverton, OR, Tech. Rep., 1976.
8. J. S. Park and A. Neugroschel, “Parameter extraction for bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, pp. 88–95, Jan. 1989.
9. HSPICE User’s Manual, Meta-Software, Inc., Campbell, CA, July 1985.
10. M. E. Hafizi, C. R. Crowell, L. M. Pawlowicz, and M. E. Kim, “Improved current gain and fT through doping profile selection in linearly graded heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 37, no. 8, pp. 1779–1788, Aug. 1990.
11. N. Chand, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, Y. C. Chang, and H. Morkocç, “Comprehensive analysis of Si-doped AlxGal–xAs (x = 0 to 1): theory and experiment,” Phys. Rev. B, vol. 30, no. 8, pp. 4481–4492, Oct. 1984.
12. G. E. Forsythe, M. A. Malcolm, and C. B. Moler, Computer Methods for Mathematical Computations. Englewood Cliffs, NJ: Prentice-Hall, 1977.
13. M. E. Hafizi et al, “Reliability analysis of GaAs/AlGaAs HBT’s under forward current/temperature stress,” presented at the IEEE GaAs IC Symp., New Orleans, LA, 1990.
14. M. E. Kim et al., “12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors,” in IEEE GaAs IC Symp. Tech. Dig., pp. 117–120, 1988.
15. Z. Yu and R. W. Dutton, “SEDAN-III—A generalized electronic material device analysis program,” Stanford Univ., Stanford, CA, Tech. Rep., July 1985.
16. M. E. Hafizi et al., “Modeling and analysis of GaAs/AlGaAs heterojunction bipolar transistors for improved current gain and fT,” in Proc. IEEE Bipolar Circuits Technol. Meet. (Minneapolis, MN, Sept. 1989), pp. 70–73.
17. B. R. Chawla and H. K. Gummel, “Transition region capacitance of diffused p-n junctions,” IEEE Trans. Electron Devices, vol. ED-18, pp. 178–195, Mar. 1971.
18. H. C. Poon and H. K. Gummel, “Modeling of emitter capacitance,” Proc. IEEE, vol. 57, pp. 2181-2182, Dec. 1969.