Novel method for fabricating deep submicron Nb/AlOx/Nb tunnel junctions based on spin-on glass planarization

IEEE Transactions on Applied Superconductivity

Volumn 9, Issue 2 PART 3, 1999, Pages 3251-3254

  Pavolotsky, Alexey B ^a   Weimanna, Thomas ^b   Scherer, Hansjörg ^b   Niemeyer, Jürgen ^b   Zorin, Alexander B ^b   Krupenin, Vladimir A ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRONIC EQUIPMENT MANUFACTURE; NIOBIUM COMPOUNDS; REACTIVE ION ETCHING; SILICON WAFERS; TRANSISTORS; TUNNEL JUNCTIONS;

ELECTRON TRANSISTORS; NIOBIUM JUNCTIONS; SPIN-ON GLASS PLANARIZATION;

SUPERCONDUCTING MATERIALS;

EID: 0032644825     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.783722     Document Type: Article

References (15)

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