Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology

Applied Physics Letters

Volumn 59, Issue 20, 1991, Pages 2609-2611

  Ketchen, M B ^a   Pearson, D ^a   Kleinsasser, A W ^a   Hu, C K ^a   Smyth, M ^a   Logan, J ^a   Stawiasz, K ^a   Baran, E ^a   Jaso, M ^a   Ross, T ^a   Petrillo, K ^a   Manny, M ^a   Basavaiah, S ^a   Brodsky, S ^a   Kaplan, S B ^a   Gallagher, W J ^a   Bhushan, M ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0000261231     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.106405     Document Type: Article

References (16)