Self-assembled InAs dots and quantum wires fabricated on patterned (3 1 1)A GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1164-1167

  Yoh, Kanji ^a   Nakasaki, Ryusuke ^a   Takabayashi, Shingo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

AMPHOTERIC DOPANTS; FACET-SELECTIVE DOPING MECHANISMS;

MOLECULAR BEAM EPITAXY;

EID: 0032643225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00011-1     Document Type: Article

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