Far-infrared study of a quasi-one-dimensional electron gas formed on (100)GaAs facets with hole gas sidegates on a (311)A GaAs substrate

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1933-1935

  Arnone, D D ^a   Burroughes, J H ^a   Pepper, M ^a   Norman, C ^b   Evans, R J ^c   Burke, T ^c   Ritchie, D A ^c   Grimshaw, M P ^c  

^a TOSHIBA CORPORATION   (Japan)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006112359     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117626     Document Type: Article

References (9)

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