Hydrogen dilution effect on the properties of coplanar amorphous silicon thin-film transistors fabricated by inductively-coupled plasma CVD

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 1001-1006

  Kim, Sung Ki ^a   Choi, Young Jin ^a   Cho, Kyu Sik ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); HYDROGEN; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

INDUCTIVELY COUPLED PLASMA (ICP) CHEMICAL VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0032635593     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760409     Document Type: Article

References (10)

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