Analysis of effective channel length in amorphous silicon thin-film transistors

Japanese Journal of Applied Physics

Volumn 31, Issue 11 R, 1992, Pages 3506-3510

  Kaneko, Yoshiyuki ^a   Toyabe, Tooru ^a   Tsukada, Toshihisa ^a  

^a HITACHI LTD   (Japan)

Author keywords

Amorphous silicon; Effective channel length; Field effect mobility; Space charge limited current; Thin film transistor

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; SEMICONDUCTING SILICON; THIN FILMS;

EFFECTIVE CHANNEL LENGTH; FIELD EFFECT MOBILITY; PARASITIC CHANNEL LENGTH; SILICON THICKNESS EFFECTS; SPACE CHARGE LIMITED CURRENT; THIN FILM TRANSISTORS;

TRANSISTORS;

EID: 0026944657     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.3506     Document Type: Article

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