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Japanese Journal of Applied Physics

Volumn 33, Issue 4S, 1994, Pages 2139-

High Rate and Highly Selective S i O2 Etching Employing Inductively Coupled Plasma

(4) Fukasawa, Takayuki a Nakamura, Akihiro a Shindo, Haruo a Horiike, Yasuhiro a

a FUKUYAMA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRON DENSITY MEASUREMENT; EMISSION SPECTROSCOPY; ETCHING; FLUOROCARBONS; HYDROFLUORIC ACID; HYDROGEN; IONS; LOOP ANTENNAS; PLASMA CONFINEMENT; SILICA; TEMPERATURE MEASUREMENT;

DOWNSTREAM REGION; INDUCTIVELY COUPLED PLASMA; LANGMUIR PROBE; SATURATION CURRENT; SELECTIVE ETCHING; SILICA ETCHING;

PLASMA APPLICATIONS;

EID: 0028404791 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.33.2139 Document Type: Article

Times cited : (71)

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