Analysis of the active layer in SI GaAs Schottky diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 410, Issue 1, 1998, Pages 79-84

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a   Canali, C ^b   Nava, F ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; INDUCED CURRENTS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE;

OPTICAL BEAM INDUCED CURRENT TECHNIQUES; SURFACE POTENTIAL TECHNIQUES;

SCHOTTKY BARRIER DIODES;

EID: 0032089526     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00166-1     Document Type: Article

References (21)

1. A. Castaldini, A. Cavallini, L. Polenta, C. Canali, C. del Papa, F. Nava, in: C. Fontaine (Ed.) 1996 IEEE Semiconducting and Semi-Insulating Materials Conf. SIMC'9, Toulouse, France, LAAS/CNRS, 361.
2. F. Nava, G. Bertuccio, P. Vanni, C. Canali, A. Cavallini, A. Castaldini, L. Polenta, IEEE Trans. Nucl. Sci. 44 (1997) 1130-1136.
3. R.S. Tang, J.S. Blakemore, R.E. Kremer, K.M. Burke, J. Appl. Phys. 66 (1989) 5428.
4. A. Barraud, Comptes Rendus 257 (1963) 1263.
5. D.S. McGregor, R.A. Rojeski, G.F. Knoll, F.L. Terry Jr., J. East, Y. Eisen, J. Appl. Phys. 75 (1994) 7910.
6. T. Kubicki, K. Luebelsmeyer, I. Ortmanns, D. Pandoulas, O. Syben, M. Toporowsky, W.J. Xiao, Nucl. Instrum. Methods Phys. Res. A 345 (1994) 468.
7. K. Berwick, M.R. Brozel, C.M. Buttar, M. Copperthwaite, P. Sellin, Y. Hou, Mater. Sci. Eng. B 28 (1994) 485.
8. A. Castaldini, A. Cavallini, C. del Papa, M. Alietti, C. Canali, F. Nava, C. Lanzieri, Scanning Microsc. 8 (1994) 969.
9. M. Alietti, C. Canali, A. Castaldini, A. Cavallini, A. Cetronio, C. Chiossi, S. D'Auria, C. del Papa, C. Lanzieri, F. Nava, P. Vanni, Nucl. Instr. and Meth. A 362 (1995) 344.
10. F. Nava, M. Alietti, C. Canali, A. Cavallini, C. Chiossi, C. del Papa, V. Re, C. Lanzieri, IEEE Trans. Nucl. Sci. 43 (1996) 1130.
11. T. Wilson, C. Sheppard, Scanning Optical Microscopy, Academic, London, 1984.
12. K. Berwick, M.R. Brozel, C.M. Buttar, M. Copperthwaite, Y. Hou, Defect recognition and image processing in semiconductors and devices, in: J. Jimenez (Ed.), Proc 5th Internat Conf., IOP Conf. Proc. No. 135, Institute of Physics and Physical Society. London, 1994 p. 305.
13. D.B. Holt, in: D.B. Holt, D.C. Joy (Eds.), SEM Microcharacterization of Semiconductors, Academic, London, 1992.
14. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York, 1981.
15. F. Dubecky, J. Darmo, J. Betko, Semicon. Sci. Technol. 9 (1994) 1654.
16. V.Y. Prinz, S.N. Rechunov, Phys. Stat. Sol. B 118, 159.
17. A. Cola, L. Raggiani, L. Vasanelli, J. Appl. Phys. 81 (1997) 997.
18. N.F. Mott, Proc. Camb. Philos. Soc. 34 (1938) 568.
19. D.S. McGregor, J.E. Kammeraad, Semic. Semimet. 43 (1995) 383.
20. E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts, Oxford Science Publications, Clarendon Press, Oxford, 1988.
21. R.H. Muller, T.I. Kamins, Device Electronics for Integrated Circuits, Wiley, Singapore, 1986.