Deep levels induced by high fluence proton irradiation in undoped GaAs diodes

Materials Research Society Symposium - Proceedings

Volumn 487, Issue , 1998, Pages 447-452

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a   Canali, C ^a   Nava, F ^a   Ferrini, R ^a   Galli, M ^a  

^a Dipartimento di Psicologia   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON BEAMS; IRRADIATION; PROTONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DEEP LEVELS; HIGH FLUENCE PROTON IRRADIATION;

SEMICONDUCTOR DIODES;

EID: 0031642658     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)