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physica status solidi (b)

Volumn 118, Issue 1, 1983, Pages 159-166

Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep‐Level Centers in GaAs

(2) Prinz, V Ya a Rechkunov, S N a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0020786824 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.2221180119 Document Type: Article

Times cited : (59)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.