Ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 660-669

  Tanaka, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; HALL EFFECT; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETOOPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH;

FERROMAGNETS; MANGANESE ARSENIDE;

HETEROJUNCTIONS;

EID: 0032630708     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01446-8     Document Type: Article

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