High mobility electron gases in Si/Si0.77Ge0.23 quantum wells at 1.7 K

Semiconductor Science and Technology

Volumn 14, Issue 8, 1999, Pages 721-726

  Crow, G C ^a   Abram, R A ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; ELECTRON SCATTERING; GROUND STATE; IMPURITIES; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; WAVE EQUATIONS;

POISSON EQUATION; SILICON GERMANIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032627348     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/8/310     Document Type: Article

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