Far-infrared cyclotron resonance study of the effect of strain and localisation in Si/SiGe two dimensional electron gases

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1159-1163

  Griffin, N ^a   Arnone, D D ^b   Paul, D J ^a   Pepper, M ^a,b   Robbins, D J ^c   Churchill, A C ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

^c DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; ELECTRON GAS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN;

ELECTRON EFFECTIVE MASS; LANDAU LEVEL FILLING; MODULATION DOPED TWO DIMENSIONAL ELECTRON GASES;

FIELD EFFECT TRANSISTORS;

EID: 0032116610     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00321-3     Document Type: Article

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