Possibility for the discrimination of submonolayer InAs and GaAs grown on tilted GaAs substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 B, 1996, Pages

  Noh, Joo Hyong ^a   Asahi, Hajime ^a   Watanabe, Hiromichi ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

GaAs; Gas source MEE; InAs; STM; STS

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ENERGY GAP; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY; SUBSTRATES; SURFACES;

GAS SOURCE MIGRATION ENHANCE EPITAXY; INDIUM ARSENIDE; SCANNING TUNNELING SPECTROSCOPY; SUBMONOLAYER;

MONOLAYERS;

EID: 0030101671     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l362     Document Type: Article

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