InAs/GaAs in-plane strained superlattices grown on slightly misoriented (1 1 0) InP substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 168-173

  Nakata, Yoshiaki ^a   Uëda, Osamu ^a   Nishikawa, Yuji ^a   Muto, Shunichi ^a,b   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; MICROANALYSIS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

ENERGY DISPERSIVE X RAY MICROANALYSIS; IN PLANE STRAINED SUPERLATTICES (IPSSL);

SEMICONDUCTOR SUPERLATTICES;

EID: 0031140978     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00826-3     Document Type: Article

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