All-epitaxial single-fused 1.55 μm vertical cavity laser based on an InP bragg reflector

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1261-1264

  Rapp, Stefan ^a   Salomonsson, Fredrik ^a   Streusel, Klaus ^b   Mogg, Sebastian ^a   Wennekes, Frank ^a   Bentell, Jonas ^a   Hammar, Mattias ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Mitel Semiconductor AB   (Sweden)

Author keywords

Distributed bragg reflectors; Long wavelength lasers; Vertical cavity lasers; Wafer fusion

Indexed keywords

ETCHING; LASER PULSES; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTOR; VERTICAL CAVITY LASER;

SEMICONDUCTOR LASERS;

EID: 0032624212     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1261     Document Type: Article

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