Optical emission range of structures with strained InAs quantum dots in GaAs

Semiconductors

Volumn 30, Issue 8, 1996, Pages 707-710

  Egorov, A Yu ^a   Zhukov, A E ^a   Kop'ev, P S ^a   Ledentsov, N N ^a   Maksimov, M V ^a   Ustinov, V M ^a   Tsatsul'nikov, A F ^a   Alferov, Zh I ^a   Fedorov, D L ^b   Bimberg, D ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b BALTIC STATE TECHNICAL UNIVERSITY   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000942313     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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