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Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 268-274

Ultrathin suicide formation for ULSI devices

(1) Tung, R T a,b

a LUCENT TECHNOLOGIES (United States)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Kinetics; Ultrathin suicide

Indexed keywords

COBALT COMPOUNDS; DEPOSITION; EPITAXIAL GROWTH; SILICON; SINGLE CRYSTALS; ULTRATHIN FILMS;

COBALT DISILICIDE; OXIDE MEDIATED EPITAXY (OME); ULTRATHIN SILICIDES;

ULSI CIRCUITS;

EID: 0031548156 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80092-X Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.