Fabrication and comparison of ferroelectric capacitor structures for memory applications

Integrated Ferroelectrics

Volumn 16, Issue 1-4, 1997, Pages 139-147

  Chung, Chee Won ^a   Lee, June Key ^a   Kim, Chang Jung ^a   Chung, Ilsub ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; ELECTRIC PROPERTIES; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES; HYSTERESIS; LEAD COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; THIN FILMS; TITANIUM DIOXIDE;

FERROELECTRIC CAPACITOR; METALLORGANIC DECOMPOSITION;

CAPACITORS;

EID: 0031331472     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013035     Document Type: Article

References (7)

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6. N. Tanabe et al, Symp. on VLSI Technol. Dig. of Technical Papers, 123, (1995).
7. C. W. Chung, W. I. Lee, and J. K. Lee, Integrated Ferroelectrics, 11, 259 (1995).