Transition from minority to ambipolar transport in crystalline silicon at high temperatures

Solid-State Electronics

Volumn 41, Issue 9, 1997, Pages 1257-1261

  Elmiger, J R ^a   Kunst, M ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON; TEMPERATURE;

AMBIPOLAR DIFFUSION CONSTANT; MINORITY CARRIER; PHOTOCONDUCTIVITY MEASUREMENT;

ELECTRON TRANSPORT PROPERTIES;

EID: 0031233642     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00077-4     Document Type: Article

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