Dependence of effective carrier lifetime in iron-doped silicon crystals on the carrier injection level

Semiconductor Science and Technology

Volumn 11, Issue 11, 1996, Pages 1713-1717

  Watanabe, Kikuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTALS; EXPERIMENTS; PHOTOCONDUCTIVITY; SILICON;

CARRIER INJECTION LEVEL; EFFECTIVE CARRIER LIFETIME; IRON-DOPED SILICON CRYSTALS;

CARRIER CONCENTRATION;

EID: 0030283755     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/11/012     Document Type: Article

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