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Volumn 170, Issue 1-4, 1997, Pages 113-116
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Highly reproducible and defect-free MOVPE overgrowth of InGaAsp-based DFB gratings
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
DEFECT-FREE MOVPE OVERGROWTH;
EPITAXIAL OVERGROWTH;
REACTIVE ION ETCHING;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0030646560
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00548-9 Document Type: Article |
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Times cited : (6)
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References (3)
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