Raman spectroscopy and scanning electron microscopy investigation of annealed amorphous carbon-germanium films deposited by d.c. magnetron sputtering

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 668-672

  Mariotto, G ^a   Vinegoni, C ^a   Jacobsohn, L G ^b   Freire Jr , F L ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

Amorphous carbon films; D.c. Magnetron sputtering; Nanocrystalline germanium; Raman spectroscopy

Indexed keywords

GRAPHITE; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; PRECIPITATION (CHEMICAL); RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS; SPUTTER DEPOSITION; THERMAL EFFECTS;

CARBON FILMS;

AMORPHOUS FILMS;

EID: 0032614773     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00328-8     Document Type: Article

References (22)

1. R.W. Collins, C.C. Tsai, M. Hirose, F. Koch, L. Bruns (Eds.), Microcrystalline and Nanocrystalline Semiconductors, Materials Research Society, Pittsburgh, PA, 1995.
2. Shao X., Rommel S.L., Orner B.A., Feng H., Dashiell M.W., Troeger R.T., Kolodzey J., Berger P.R., Lauren T. Appl. Phys. Lett. 72:1998;1860.
3. Kim E.S., Usami N., Shiraki Y. Appl. Phys. Lett. 72:1998;1617.
4. Seal C.K., Samara D., Banerjee S.K. Appl. Phys. Lett. 71:1997;3564.
5. Schmidt O.G., Lange C., Eberl K., Kienzle O., Ernst F. Appl. Phys. Lett. 71:1997;2340.
6. Meléndez-Lira M., Menéndez J., Windl W., Sankey O.F., Spencer G.S., Sego S., Culbertson R.B., Blair A.E., Alford T.L. Phys. Rev. B. 54:1996;12866.
7. Yang B.-K., Krishnamurthy M., Weber W.H. J. Appl. Phys. 82:1997;3287.
8. Wu X.L., Gao T., Bao X.M., Yan F., Jiang S., Feng D. J. Appl. Phys. 82:1997;2704.
9. Kobayashi T., Endoh T., Fukuda H., Nomura S., Sakai A., Ueda Y. Appl. Phys. Lett. 71:1997;1195.
10. Carles R., Mlayah A., Amjoud M., Reynes A., Morancho R. Jpn. J. Appl. Phys. 31:1992;3511.
11. John T.-M., Veit P., Anton R., Drüsedau T. Thin Solid Films. 296:1997;69.
12. Vilcarromero J., Marques F.C., Freire F.L. Jr. J. Appl. Phys. 81:1998;174.
13. Jacobsohn L.G., Freire F.L. Jr., Mariotto G. Diamond Relat. Mater. 7:1998;440.
14. Dillon R.O., Woollam J.A., Katkanant V. Phys. Rev. B. 29:1984;3482.
15. Tuinstra F., Koening J.L. J. Chem. Phys. 53:1970;1126.
16. Mariotto G., Freire F.L. Jr., Achete C.A. Thin Solid Films. 241:1994;225.
17. J.S. Lannin, in: Semiconductor and Semimetals, vol. 21, Academic Press, New York, 1984, chapter 6.
18. Zhang J.M., Giehler M., Göbel A., Ruf T., Cardona M., Haller E.E., Itoh K. Phys. Rev. B. 57:1998;1348.
19. Richter H., Zhang Z.P., Ley W. Solid State Commun. 39:1981;625.
20. Campbell I.H., Fauchet P.M. Solid State Commun. 58:1986;739.
21. Ovsyuk N.N., Gorokhov E.B., Grishenko V.V., Shebanin A.P. JETP Lett. 47:1988;298.
22. dos Santos D.R., Torriani I.L. Solid State Commun. 85:1993;307.