Optoelectronic and structural properties of a-Ge1-xCx:H prepared by rf reactive cosputtering

Journal of Applied Physics

Volumn 84, Issue 1, 1998, Pages 174-180

  Vilcarromero, J ^a   Marques, F C ^a   Freire Jr , F L ^b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC PROPERTIES; FILM PREPARATION; GERMANIUM ALLOYS; LIGHT ABSORPTION; MOLECULAR VIBRATIONS; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; SPUTTERING; STRESSES; STRUCTURE (COMPOSITION);

DARK CONDUCTIVITY; GRAPHITE GERMANIUM COMPOSITE; HYDROGENATED AMORPHOUS GERMANIUM CARBON ALLOYS; OPTICAL GAP;

AMORPHOUS ALLOYS;

EID: 0032112531     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368093     Document Type: Article

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