Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2696-2699

  Yu, L S ^a   Qiao, D ^a   Lau, S S ^a   Redwing, J M ^b   Lin, J Y ^c   Jiang, H X ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Epitronics/ATMI 21002 ^*  (United States)

^c KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); PHOTOCONDUCTANCE METHODS;

HETEROJUNCTIONS;

EID: 0032614162     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371113     Document Type: Article

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