Photoreflectance spectra from a surface and an interface of n-type GaAs epitaxial layers and their modulation frequency dependence

Applied Surface Science

Volumn 115, Issue 4, 1997, Pages 347-354

  Yoshita, Masahiro ^a   Takahashi, Takuji ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Carrier lifetime; Depletion layer; GaAs; Modulation frequency dependence; Photo carriers; Photoreflectance

Indexed keywords

INTERFACES (MATERIALS); REFLECTOMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; SUBSTRATES; SURFACES;

CARRIER LIFETIME; EPITAXIAL LAYER; MODULATION FREQUENCY DEPENDENCE; PHOTO CARRIER; PHOTOREFLECTANCE MEASUREMENT;

SURFACE PROPERTIES;

EID: 0031212976     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00004-4     Document Type: Article

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