Comparison of experiment and theory of the photoconductivity of a-Si:H up to a generation rate of 1028cm-3s-1

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 729-734

  Stradins, P ^a   Fritzsche, H ^a   Tzanetakis, P ^a   Kopidakis, N ^a  

^a UNIVERSITY OF CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CALCULATIONS; DEFECTS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY;

CARRIER CAPTURE COEFFICIENT; MONOMOLECULAR RECOMBINATION; PHOTOCARRIER GENERATION RATE;

AMORPHOUS SILICON;

EID: 0030394247     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-729     Document Type: Conference Paper

References (10)