High nucleation rate in pure SiC nanometric powder by a combination of room temperature plasmas and post-thermal treatments

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 364-368

  Viera, G ^a   Costa, J ^b   Roura, P ^b   Bertran, E ^a  

^a IN2UB   (Spain)

^b Dept Eng Industrial   (Spain)

Author keywords

Nanocrystalline; Plasma CVD; Silicon carbide; Ultrafine powder

Indexed keywords

ANNEALING; ELECTRON DIFFRACTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; METHANE; NANOSTRUCTURED MATERIALS; NUCLEATION; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWDERS; SILANES; TRANSMISSION ELECTRON MICROSCOPY;

LOW TEMPERATURE RADIOFREQUENCY PLASMAS;

SILICON CARBIDE;

EID: 0032608309     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00306-9     Document Type: Article

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