Er doping of III-nitrides during growth by metalorganic molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 84-88

  MacKenzie, J D ^a   Abernathy, C R ^a   Pearton, S J ^a   Hommerich U ^b   Wu, X ^b   Schwartz, R N ^c   Wilson, R G ^c   Zavada, J M ^d  

^a University of Florida   (United States)

^b HAMPTON UNIVERSITY   (United States)

^c Hughes Aircraft Co   (United States)

^d U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; QUENCHING; REDUCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; PLASMA ASSISTED METALORGANIC MOLECULAR BEAM EPITAXY;

NITRIDES;

EID: 0031140997     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00925-6     Document Type: Article

References (16)

1. F.Y.G. Ren, J. Michel, Q. Sun-paduano, B. Zheng, H. Kitagawa, D.C. Jacobson, J.M. Poate and L.C. Kimmerling, MRS Symp. Proc. 301 (1993) 125.
2. G. Franzo, F. Priolo, S. Coffa, A. Polman and A. Camera, Nucl. Instrum. Methods B 96 (1995) 374.
3. J. Nakata, M. Taniguchi and K. Takahei, Appl. Phys. Lett. 61 (1992) 2665.
4. A.J. Neuhalfen and B.W. Wessels, Appl. Phys. Lett. 59 (1991) 2317.
5. J.M. Redwing, T.F. Kuech, D.C. Jordon, B.A. Vararstra and S.S. Lau, J. Appl. Phys. 76 (1994) 1585.
6. P.N. Favennec, H. L'Haridon, D. Moutonnet and Y.L. Guillo, Electron. Lett. 25 (1989) 718.
7. J.M. Zavada and Dahua Zhang, Solid State Electron. 38 (1995) 1285.
8. S. Coffa, F. Priolo, G. Franzo, V. Bellani. A. Camera and C. Spinella, Phys. Rev. B 48 (1994) 11782.
9. J. Michel, J.L. Benton, R.I. Ferranta, D.C. Jacobson, D.J. Eaglesham, E.A. Fitzgerald, Y.H. Xie, J.M. Poate and L.C. Kimmerling, J. Appl. Phys. 70 (1991) 2672.
10. R.G. Wilson, R.N. Schwartz, C.R. Abernathy, S.J. Pearton, N. Newman, M. Rubin, T. Fu and J.M. Zavada, Appl. Phys. Lett. 65 (1994) 992.
11. J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, V. Krishnamoorthy, S. Bharatan, K.S. Jones and R.G. Wilson, Appl. Phys. Lett. 67 (1995) 253.
12. P.N. Favennec, H. L'Haridon, D. Moutonnet, M. Salvi and M. Gauneau, Jpn. J. Appl. Phys. 29 (1990) L524.
13. J. Michel, J.L. Benton, R.F. Ferrante, D.C. Jacobson, D.J. Eaglesham, E.A. Fitzgerald, Y. Xie, J.M. Poate and L.C. Kimmerling, J. Appl. Phys. 70 (1991) 2672.
14. J.E. Colon, D.W. Elsaesser, Y.K. Yeo, R.L. Hengehold and G.S. Pomrenke, MRS Symp, Proc. 301 (1993) 169.
15. G.N. van den Hoven, PhD Thesis, University of Utrecht, The Netherlands (1996).
16. A.J. Neuhalfen and B. Wessels, Appl. Phys. Lett. 59 (1991) 2317.