Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations

Applied Physics Letters

Volumn 72, Issue 12, 1998, Pages 1424-1426

  Flatté, Michael E ^a   Grein, C H ^b   Ehrenreich, H ^c  

^a UNIVERSITY OF IOWA   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; CALCULATIONS; COMPOSITION EFFECTS; CURRENT DENSITY; OPTIMIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SENSITIVITY ANALYSIS; THERMAL EFFECTS;

MID INFRARED SEMICONDUCTOR LASERS; OPTIMIZED SUPERLATTICES; UNOPTIMIZED SUPERLATTICES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032021970     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120583     Document Type: Article

References (14)

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