Negative magnetoresistance in insulating n-type GaAs and localized magnetic moments

Solid State Communications

Volumn 101, Issue 7, 1997, Pages 525-529

  Monsterleet, J M ^a   Capoen, B ^a   Biskupski, G ^a  

^a UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

Author keywords

A. disordered systems; A. semiconductors; D. electronic states (localized); D. electronic transport

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC INSULATING MATERIALS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETIC MOMENTS; MAGNETORESISTANCE; MATHEMATICAL MODELS;

DISORDERED SYSTEMS; HOPPING CONDUCTIVITY; LANGEVIN FUNCTION; NEGATIVE MAGNETORESISTANCE (NMR); QUANTUM INTERFERENCE EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031079124     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00643-6     Document Type: Article

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