Explicit formulation of a series resistance correction procedure for mosfet parameter extraction and its accuracy analysis

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 1057-1058

  Niu, G F ^a   Cressler, J D ^a   Mathew, S J ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347537538     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00270-0     Document Type: Article

References (3)

1. Simoen, E. and Claeys, C. Solid-State Electron. (1997) 41, 659.
2. Arora, N., MOSFET Models for VLSI Circuit Simulation, Springer-Verlag, 1993.
3. Taur, Y., Zicherman, D. S., Lombardi, D. R., Restle, P. J., Hsu, C. H., Hanafi, H. I., Wordeman, M. R., Davari, B. and Shahidi, G. G. IEEE Electron Device Letters (1992) 13, 267.