SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 536, Issue , 1999, Pages 499-504

Dechannealing study of nanocrystalline si:h layers produced by high dose hydrogen irradiation of silicon crystals

(7) Popov, V P a,c Gutakovsky, A K a,b Antonova, I V a,b Zhuravlev, K S a,b Spesivtsev, E V a,b Morosov, I I a,b Pokhil, O P a,b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b BUDKER INSTITUTE OF NUCLEAR PHYSICS (Russian Federation)

c MOSCOW STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELLIPSOMETRY; HYDROGEN; ION IMPLANTATION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

HYDROGEN IMPLANTATION; HYDROGENATED SILICON; QUASI NANOCRYSTALLITES; SILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0032591482 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (1)

References (10)

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