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Volumn 175-176, Issue PART 1, 1997, Pages 340-345
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In-situ BEEM study of interfacial dislocations and point defects
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Author keywords
[No Author keywords available]
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Indexed keywords
DISLOCATIONS (CRYSTALS);
ELECTRON EMISSION;
ELECTRON SCATTERING;
ELECTRON SPECTROSCOPY;
POINT DEFECTS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR GROWTH;
BALLISTIC-ELECTRON-EMISSION-SPECTROSCOPY (BEEM);
HETEROJUNCTIONS;
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EID: 0031141088
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00867-6 Document Type: Article |
Times cited : (5)
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References (19)
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