Time resolved measurement of intersubband lifetime in GaAs quantum wells using a two-colour free electron laser

Electronics Letters

Volumn 32, Issue 25, 1996, Pages 2357-2358

  Boucaud, P ^a   Julien, F H ^a   Prazeres, R ^a   Ortega, J M ^a   Berger, V ^b   Nagle, J ^b   Leburton, J P ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b THALES   (France)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Carrier lifetime; Free elecron lasers; Gallium arsenide; Semiconductor quantum wells

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRON TRANSITIONS; FREE ELECTRON LASERS; LIGHT ABSORPTION; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE;

INTERSUBBAND LIFETIME; TIME RESOLVED MEASUREMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030571387     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961550     Document Type: Article

References (8)

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