Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

Applied Physics Letters

Volumn 73, Issue 25, 1998, Pages 3689-3691

  Schmidt, T J ^a   Bidnyk, S ^a   Cho, Yong Hoon ^a   Fischer, A J ^a   Song, J J ^a   Keller, S ^b   Mishra, U K ^b   Denbaars, S P ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EMISSION SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; STIMULATED EMISSION; THIN FILMS;

EMISSION INTENSITY; EXCITATION DENSITY; EXCITATION LENGTH; INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032556593     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122864     Document Type: Article

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