Oxygen precipitation and denuded zone characterization with the electrolytical metal tracer technique

Journal of Applied Physics

Volumn 82, Issue 2, 1997, Pages 595-600

  Obermeier, Guenther ^a   Hage, Juergen ^a   Huber, Diethard ^a  

^a SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005041019     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365586     Document Type: Article

References (26)

1. R. A. Craven, Semiconductor Silicon 1981 (The Electrochemical Society, Pennington NJ, 1981), p. 254.
2. S. M. Hu, Mater. Res. Soc. Symp. Proc. 59, 249 (1986).
3. F. Shimura and H. Tsuyn, J. Electrochem. Soc. 29, 1062 (1982).
4. H. Ono and T. Ikarashi, Appl. Phys. Lett. 63, 3303 (1993).
5. A. Borghesi and B. Pivac, J. Appl. Phys. 77, 4169 (1995).
6. M. Mahaja, G. A. Rozgonyi, and D. Brasen, Appl. Phys. Lett. 30, 73 (1977).
7. T. Y. Tan and W. K. Tiel, Philos. Mag. 34, 615 (1976).
8. D. M. Maher, A. Staudinger, and J. R. Patel, J. Appl. Phys. 47, 3813 (1976).
9. F. Shimura, J. Cryst. Growth 54, 588 (1981).
10. T. Y. Tan, E. E. Gardner, and W. K. Tice, Appl. Phys. Lett. 30, 175 (1977).
11. F. Shimura, VLSI Science and Technology 1982 (The Electrochemical Society, Princeton, NJ, 1982), p. 17.
12. W. Bergholz, G. Zoth, F. Gelsdorf, and B. Kolbesen, Defects in Silicon 1991 (The Electrochemical Society, Washington, DC, 1991), p. 21.
13. W. K. Tice and T. Y. Tan, Defects in Semiconductors (North-Holland, Amsterdam, 1981), p. 367.
14. E. C. Colas and E. R. Weber, Appl. Phys. Lett. 48, 1371 (1986).
15. H.-D. Chiou, Solid State Technol. 30, 77 (1987).
16. H. Ruiz and G. P. Pollak, J. Electrochem. Soc. 125, 128 (1978).
17. S. Kim and W. Wijaranakula, J. Electrochem. Soc. 142, 553 (1995).
18. H. Föll, Appl. Phys. A 53, 8 (1991).
19. W. Bergholz, D. Landsmann, P. Schaubergerand, and B. Schoepperl, Crystalline Defects and Contamination (The Electrochemical Society, Pennington, NJ, 1994), p. 69.
20. V. Lehmann, thesis, University of Erlangen, 1988.
21. F. Secco d'Arangona, J. Electrochem. Soc. 119, 948 (1972).
22. J. M. Hwang and D. K. Schroder, J. Appl. Phys. 59, 2476 (1986).
23. L. Jastrzebski, Mater. Sci. Eng. B 4, 113 (1989).
24. M. A. Nokes and P. Flesher, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing (SPIE, Bellingham, WA, 1994), p. 117.
25. J. Carstensen, W. Lippik, and H. Föll, Semiconductor Silicon 1994 (The Electrochemical Society, Pennington, NJ, 1994), p. 1105.
26. E. S. Nartowitz and A. M. Goodman, J. Electrochem. Soc. 132, 2992 (1985).