Current status of 200 mm and 300 mm silicon wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1210-1216

  Huff, Howard R ^a   Mccormack Jr , D W ^a   Au, Chi ^b   Messina, Troy ^b   Chan, Kevin ^b   Goodall, Randal K ^b  

^a SEMATECH   (United States)

^b I300I ^*  (United States)

Author keywords

200 mm; 300 mm; Flatness; Metals; Oxygen; Particles; Silicon

Indexed keywords

EID: 0342474963     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1210     Document Type: Article

References (21)

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4. SEMI Int'l Stds. 1997 - Materials M28-96 (1997).
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18. C. Au, T. Messina, R. Goodall and H. R. Huff: to be published in Characterization of 300 mm Silicon Polished Wafers, Semiconductor Silicon/1998, eds. H. R. Huff, U. Gosele and H. Tsuya.
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21. We appreciate the reviewer pointing this out.