High-power 630-nm-band AlGaInP laser diodes with strain-compensated single quantum well active layer

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 11, Issue , 1997, Pages 335-336

  Hiroyama, R ^a   Nishida, T ^a   Uetani, T ^a   Bessho, Y ^a   Shono, M ^a   Sawada, M ^a   Ibaraki, A ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; THERMAL EFFECTS;

OPTICAL CONFINEMENT; STRAIN COMPENSATED SINGLE QUANTUM WELL (SC SQW); THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0030713929     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)