Investigation of thermal annealing processes on the activation of Mg acceptors and the structural quality of GaN

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1397-1400

  Schineller, B ^a   Guttzeit, A ^a   Schon O ^a,b   Heuken, M ^a,b   Heime, K ^a   Beccard, R ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

Annealing; Mg Doping; Photoluminescence; Potential Profiling

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH TEMPERATURE EFFECTS; MAGNESIUM; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

FULL WIDTH AT HALF MAXIMUM (FWHM); POTENTIAL PROFILING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031673316     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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