Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 798-802

  Schineller, B ^a   Guttzeit, A ^a   Vertommen, F ^a   Schon O ^a,b   Heuken, M ^a,b   Heime, K ^a   Beccard, R ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

Annealing; Doping; GaN; LED; Photoluminescence

Indexed keywords

ANNEALING; ELECTROOPTICAL DEVICES; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HIGH BACKGROUND DONOR CONCENTRATION;

LIGHT EMITTING DIODES;

EID: 0032094520     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00297-8     Document Type: Article

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