Si and C δ-doping for device applications

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 54-57

  Li, G ^a,b   Johnston, M B ^c   Babinski, A ^d   Yuan, S ^a   Gal, M ^c   Chua, S J ^b,c,d   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d UNIVERSITY OF WARSAW   (Poland)

Author keywords

Compound semiconductor; Epitaxial growth; MOVPE; Doped; Doping

Indexed keywords

ALUMINUM GALLIUM ARSENIDE;

CARBON; CARRIER CONCENTRATION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032477156     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00640-X     Document Type: Article

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