-
2
-
-
5344274453
-
High-power, high-TV, high-reliability pump-laser modules
-
Optical Society of America, Washington D.C.
-
M. Seki, S. Namiki, T. Takase, Y. Ikegami, A. Kasukawa, and Y. Shirasaka, "High-power, high-TV, high-reliability pump-laser modules," OFC'95 Tech. Dig., vol. 8, Optical Society of America, Washington D.C., pp. 213-214, 1995.
-
(1995)
OFC'95 Tech. Dig.
, vol.8
, pp. 213-214
-
-
Seki, M.1
Namiki, S.2
Takase, T.3
Ikegami, Y.4
Kasukawa, A.5
Shirasaka, Y.6
-
3
-
-
83255194401
-
Kink-free high-fiber-coupled-power 0.98-μm narrow-beam lasers
-
Y. Yoshida, A. Shima, T. Kamizato, A. Takemoto, S. Karakida, Y. Nagai, A. Adachi, K. Shigihara, E. Omura, and M. Otsubo, "Kink-free high-fiber-coupled-power 0.98-μm narrow-beam lasers," OFC'95 Tech. Dig., vol. 8, p. 231, 1995.
-
(1995)
OFC'95 Tech. Dig.
, vol.8
, pp. 231
-
-
Yoshida, Y.1
Shima, A.2
Kamizato, T.3
Takemoto, A.4
Karakida, S.5
Nagai, Y.6
Adachi, A.7
Shigihara, K.8
Omura, E.9
Otsubo, M.10
-
4
-
-
0029325231
-
0.70-and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD
-
A. Shima, H. Kizuki, A. Takemoto, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, K. Shigihara. A. Adachi, E. Omura, and M. Otsubo, "0.70-and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 102-109, 1995.
-
(1995)
IEEE J. Select. Topics Quantum Electron.
, vol.1
, pp. 102-109
-
-
Shima, A.1
Kizuki, H.2
Takemoto, A.3
Karakida, S.4
Miyashita, M.5
Nagai, Y.6
Kamizato, T.7
Shigihara, K.8
Adachi, A.9
Omura, E.10
Otsubo, M.11
-
5
-
-
5344230567
-
Optical amplifiers and their applications
-
Optical Society of America, Washington D.C., paper WD5
-
J. A. Sharps, P. A. Jakobson, and D. W. Hall, "Optical amplifiers and their applications," Tech. Dig. Series, vol. 14, Optical Society of America, Washington D.C., paper WD5, 1994.
-
(1994)
Tech. Dig. Series
, vol.14
-
-
Sharps, J.A.1
Jakobson, P.A.2
Hall, D.W.3
-
6
-
-
5344278114
-
-
to be published
-
S. Ishikawa, K. Fukagai, H. Chida, and T. Kawai, "High-power, highly reliable 980-nm pump laser diodes," to be published.
-
High-power, Highly Reliable 980-nm Pump Laser Diodes
-
-
Ishikawa, S.1
Fukagai, K.2
Chida, H.3
Kawai, T.4
-
7
-
-
3643117139
-
Qualification-testing and field-reliability results for 980-nm pump lasers
-
Optical Society of America, Washington D.C.
-
G. Grasso, F. Magistrali, G. Salmini, A. Oosenburg, A. Jakubowicz, D. Darby, and P. Whitney, "Qualification-testing and field-reliability results for 980-nm pump lasers," OFC'95 Tech. Dig., vol. 8, Optical Society of America, Washington D.C., pp. 232-233, 1995.
-
(1995)
OFC'95 Tech. Dig.
, vol.8
, pp. 232-233
-
-
Grasso, G.1
Magistrali, F.2
Salmini, G.3
Oosenburg, A.4
Jakubowicz, A.5
Darby, D.6
Whitney, P.7
-
8
-
-
0027698552
-
Aluminum-free 980 nm laser diodes
-
M. Pessa, J. Näppi, G. Zhang, A. Ovtchinnikov, and H. Asonen. "Aluminum-free 980 nm laser diodes," Mat. Science Eng., vol. B21, pp. 211-216, 1993.
-
(1993)
Mat. Science Eng.
, vol.B21
, pp. 211-216
-
-
Pessa, M.1
Näppi, J.2
Zhang, G.3
Ovtchinnikov, A.4
Asonen, H.5
-
9
-
-
0000920371
-
GaInAs/GaAs/GaInP strained quantum well lasers (λ = 0.98 μm) by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells
-
J. N. Baillargeon, K. Y. Cheng, and A. Cho, "GaInAs/GaAs/GaInP strained quantum well lasers (λ = 0.98 μm) by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells," Appl. Phys. Lett., vol. 67, pp. 2960-2962, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 2960-2962
-
-
Baillargeon, J.N.1
Cheng, K.Y.2
Cho, A.3
-
10
-
-
0029324754
-
0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer
-
M. Usami, Y. Matsushima, and Y. Takahashi, "0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 244-249, 1995.
-
(1995)
IEEE J. Select. Topics Quantum Electron.
, vol.1
, pp. 244-249
-
-
Usami, M.1
Matsushima, Y.2
Takahashi, Y.3
-
11
-
-
0027610840
-
High-power operation of aluminum-free (λ = 0.98 μm) pump laser for erbium-doped fiber amplifier
-
H. Asonen, J. Näppi, A. Ovtchinnikov, P. Savolainen, G. Zhang, R. Ries, and M. Pessa, "High-power operation of aluminum-free (λ = 0.98 μm) pump laser for erbium-doped fiber amplifier," IEEE Photon. Technol. Lett., vol. 5, pp. 589-591, 1993.
-
(1993)
IEEE Photon. Technol. Lett.
, vol.5
, pp. 589-591
-
-
Asonen, H.1
Näppi, J.2
Ovtchinnikov, A.3
Savolainen, P.4
Zhang, G.5
Ries, R.6
Pessa, M.7
-
12
-
-
0000050626
-
All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ = 980 μm)
-
M. Toivonen, M. Jalonen, A. Salokatve, J. Näppi, P. Savolainen, M. Pessa, and H. Asonen, "All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (λ = 980 μm)," Appl. Phys. Lett., vol. 67, pp. 2332-2334, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 2332-2334
-
-
Toivonen, M.1
Jalonen, M.2
Salokatve, A.3
Näppi, J.4
Savolainen, P.5
Pessa, M.6
Asonen, H.7
-
13
-
-
0029322718
-
High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers
-
M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, and K. Uomi, "High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 189-195, 1995.
-
(1995)
IEEE J. Select. Topics Quantum Electron.
, vol.1
, pp. 189-195
-
-
Sagawa, M.1
Toyonaka, T.2
Hiramoto, K.3
Shinoda, K.4
Uomi, K.5
-
14
-
-
0027617346
-
0.98-μm InGaAs-InGaAsP-GaInP lasers for coupling high-optical power into single-mode fiber
-
M. Ohkubo, S. Namiki, T. Ijichi, A. Iketani, and T. Kikuta, "0.98-μm InGaAs-InGaAsP-GaInP lasers for coupling high-optical power into single-mode fiber," IEEE J. Quantum Electron., vol. 29, pp. 1932-1935, 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 1932-1935
-
-
Ohkubo, M.1
Namiki, S.2
Ijichi, T.3
Iketani, A.4
Kikuta, T.5
-
15
-
-
0026706999
-
Analysis of current injection efficiency of separate-confinement-heterostructure quantum well lasers
-
H. Hirayama, Y. Miayake, and M. Asada, "Analysis of current injection efficiency of separate-confinement-heterostructure quantum well lasers," IEEE J. Quantum Electron., vol. 28, pp. 68-74, 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.28
, pp. 68-74
-
-
Hirayama, H.1
Miayake, Y.2
Asada, M.3
-
16
-
-
0029410218
-
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation
-
L. J. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Botez, J. A. Morris, and P. Zory, "High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation," Appl. Phys. Lett., vol. 67, pp. 2901-2903, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 2901-2903
-
-
Mawst, L.J.1
Bhattacharya, A.2
Nesnidal, M.3
Lopez, J.4
Botez, D.5
Morris, J.A.6
Zory, P.7
-
17
-
-
0027614395
-
Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (λ ∼ 980 nm) grown by gas-source MBE
-
G. Zhang, A. Ovtchinnikov, J. Näppi, H. Asonen, and M. Pessa, "Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (λ ∼ 980 nm) grown by gas-source MBE," IEEE J. Quantum Electron., vol. 29, pp. 1943-1949, 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 1943-1949
-
-
Zhang, G.1
Ovtchinnikov, A.2
Näppi, J.3
Asonen, H.4
Pessa, M.5
-
19
-
-
5344244609
-
980 nm lasers chips for optical fiber amplifiers and as high-power pump sources
-
IBM Zurich Research Laboratory, "980 nm lasers chips for optical fiber amplifiers and as high-power pump sources," IBM leaflet, 1993.
-
(1993)
IBM Leaflet
-
-
-
21
-
-
5344238048
-
-
unpublished work
-
J. Hashimoto, I. Yoshida, M. Murata, and T. Katsuyama, "Time dependence of catastrophic damage (COD) of 0.98 μm GaInAs/GaInP strained quantum well lasers," unpublished work, 1995.
-
(1995)
Time Dependence of Catastrophic Damage (COD) of 0.98 μM GaInAs/GaInP Strained Quantum Well Lasers
-
-
Hashimoto, J.1
Yoshida, I.2
Murata, M.3
Katsuyama, T.4
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