Electrical activation of carbon δ-doped (Al,Ga) As grown by metalorganic vapour-phase epitaxy

Journal of Crystal Growth

Volumn 173, Issue 3-4, 1997, Pages 302-306

  Li, G ^a   Petravic M ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM DENSITY; ELECTRICAL ACTIVATION; HOLE DENSITY;

CARBON; CHARGE CARRIERS; COMPOSITION EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUPERLATTICES; THERMAL EFFECTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031117661     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00810-X     Document Type: Article

References (13)

1. T.F. Kuech, M.A. Tischler, P.J. Wang, G. Scilla, R. Potemski and F. Cardone, Appl. Phys. Lett. 53 (1988) 1317.
2. R.L. Wang, Y.-K. Su, Y.H. Wang and K.F. Yarn, IEEE Electron Dev. Lett. 11 (1990) 428.
3. J. Oswald and M. Pippan, Semicond. Sci. Technol. 8 (1993) S435.
4. A.G. Larsson and J. Maserjian, Opt. Eng. 31 (1992) 1576.
5. C.R. Abernathy, S.J. Pearton, R. Caruso, F. Ren and J. Kovalchik, Appl. Phys. Lett. 55 (1989) 1750.
6. T. Yamada, M. Shirahama, E. Tosumitsu, M. Konagai and K. Takahashi, Jpn. J. Appl. Phys. 32 (1993) L1123.
7. L.M. Batukova, T.S. Batushkina, Yu N. Drozdov, B.N. Zvonkov, I.G. Malkina and T.N. Yan'kova, Inorg. Mater. 29 (1993) 309.
8. T. Makimoto and N. Kobayashi, Jpn. J. Appl. Phys. 32 (1993) L1300.
9. G. Li, M. Petravic and C. Jagadish, J. Appl. Phys. 79 (1996) 3554.
10. C. Jagadish and G. Li, Incorporation mechanism of carbon during δ-doping of AlGaAs grown by MOVPE, 6th European Workshop on MOVPE and Related Growth Techniques, 25-28 June (1995)
11. G. Li, M. Petravic and C. Jagadish, J. Appl. Phys. 78 (1995) 3546.
12. M. Masi, H. Simka, K.F. Jensen, T.F. Kuech and Y. Potemski, J. Crystal Growth 124 (1992) 483.
13. T.F. Kuech and J.M. Redwing, J. Crystal Growth 145 (1994) 382.