Carbon δ-doping GaAs superlattices

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 5, 1996, Pages 355-360

  Davidson, B R ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON TETRACHLORIDE; CHEMICAL BEAM EPITAXY; HYDROGEN; INFRARED SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

CARBON DOPING; CARBON TETRABROMIDE; CARRIER CONCENTRATION; GALLIUM ARSENIDE SUPERLATTICES; HIGH RESOLUTION X RAY DIFFRACTOMETRY; LOCALIZED VIBRATIONAL MODEL IR SPECTROSCOPY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030260627     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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