메뉴 건너뛰기




Volumn 170, Issue 1-4, 1997, Pages 155-160

Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

EID: 0030672923     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00640-9     Document Type: Article
Times cited : (6)

References (15)
  • 9
    • 30244456529 scopus 로고
    • PhD Thesis, Philipps University, Marburg, Germany
    • A. Greiling, PhD Thesis, Philipps University, Marburg, Germany, 1991.
    • (1991)
    • Greiling, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.