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Volumn 68, Issue 8, 1996, Pages 1081-1083

Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

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EID: 0000355943     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115719     Document Type: Article
Times cited : (7)

References (13)
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    • Lead references for EPR studies include the following: J. H. Stathis and E. Cartier, Phys. Rev. Lett. 72, 2745 (1994); E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett. 63, 1510 (1993); J. F. Conley and P. M. Lenahan, ibid, 62, 40 (1993); P. J. Caplan, E. H. Poindexter, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 50, 5847 (1979); Y. Nishi, Jpn. J. Appl. Phys. 10, 52 (1971).
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    • Lead references for device based observations include the following: J. M. M. Nijs, K. G. Druijf, V. V. Afanas'ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994); N. S. Saks and D. B. Brown, IEEE Trans. Nucl. Sci. 37, 1624 (1990); 36, 1848 (1989); N. M. Johnson, D. K. Biegelson, M. D. Moyer, S. T. Chang, E. H. Poindexter, and P. J. Caplan, Appl. Phys. Lett. 43, 563 (1983); A. G. Revesz, J. Electrochem. Soc. 126, 122 (1979).
    • Lead references for device based observations include the following: J. M. M. Nijs, K. G. Druijf, V. V. Afanas'ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994); N. S. Saks and D. B. Brown, IEEE Trans. Nucl. Sci. 37, 1624 (1990); 36, 1848 (1989); N. M. Johnson, D. K. Biegelson, M. D. Moyer, S. T. Chang, E. H. Poindexter, and P. J. Caplan, Appl. Phys. Lett. 43, 563 (1983); A. G. Revesz, J. Electrochem. Soc. 126, 122 (1979).
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    • 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1993), Vol. 2.
    • 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1993), Vol. 2.
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    • H. Ogawa, N. Terada, K. Sugiyama, K. Moriki, N. Miyata, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Appl. Surf. Sci. 56-58, 836 (1992); T. Hattori and H. Ogawa, Appl. Phys. Lett. 61, 577 (1992); T. Hattori, Thin Solid Films 206, 1 (1991); P. J. Gruthaner, M. H. Hecht, F. J. Grunthaner, and N. M. Johnson, J. Appl. Phys. 61, 629 (1987).
    • H. Ogawa, N. Terada, K. Sugiyama, K. Moriki, N. Miyata, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Appl. Surf. Sci. 56-58, 836 (1992); T. Hattori and H. Ogawa, Appl. Phys. Lett. 61, 577 (1992); T. Hattori, Thin Solid Films 206, 1 (1991); P. J. Gruthaner, M. H. Hecht, F. J. Grunthaner, and N. M. Johnson, J. Appl. Phys. 61, 629 (1987).
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    • T. Kuroda and H. Iwakuro, Jpn. J. Appl. Phys. 32, 1273 (1993); G. Fortunato, L. Mariucci, A. Pecora, M. Fanfoni, and S. Priori, Appl. Phys. Lett. 60, 1564 (1992); M. Fanfoni, A. Pecora, G. Fortunato, L. Mariucci, S. Priori, and C. Quaresima, J. Non-Cryst. Solids 137&138, 1079 (1991).
    • T. Kuroda and H. Iwakuro, Jpn. J. Appl. Phys. 32, 1273 (1993); G. Fortunato, L. Mariucci, A. Pecora, M. Fanfoni, and S. Priori, Appl. Phys. Lett. 60, 1564 (1992); M. Fanfoni, A. Pecora, G. Fortunato, L. Mariucci, S. Priori, and C. Quaresima, J. Non-Cryst. Solids 137&138, 1079 (1991).
  • 7
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    • For lead references into the ongoing discussion of binding energy assignments in the interface region see Refs. 8 and 9 in this letter as well as the following references:
    • For lead references into the ongoing discussion of binding energy assignments in the interface region see Refs. 8 and 9 in this letter as well as the following references: A. Pasquarello, M. S. Hybertson, and R. Car, Phys. Rev. Lett. 74, 1024 (1995);
    • (1995) Phys. Rev. Lett. , vol.74 , pp. 1024
    • Pasquarello, A.1    Hybertson, M.S.2    Car, R.3
  • 8
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    • in Elsevier, New York F. J. Himpsel, D. A. Lapiano-Smith, and J. F. Bevk, in Ref. 3, pp. 237-245
    • H. Kageshima and M. Tabe in Control of Semiconductor Interfaces (Elsevier, New York, 1994); F. J. Himpsel, D. A. Lapiano-Smith, and J. F. Bevk, in Ref. 3, pp. 237-245.
    • (1994) Control of Semiconductor Interfaces
    • Kageshima, H.1    Tabe, M.2
  • 10
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    • (a) M. M. Banaszak Holl and F. R. McFeely, Phys. Rev. Lett. 71, 2441 (1993); (b) M. M. Banaszak Holl, S. Lee, and F. R. McFeely, Appl. Phys. Lett. 65 1097 (1994); (c) S. Lee, S. Makan, M. M. Banaszak Holl, and F. R. McFeely, J. Am. Chem. Soc. 116, 11819 (1994).
    • (a) M. M. Banaszak Holl and F. R. McFeely, Phys. Rev. Lett. 71, 2441 (1993); (b) M. M. Banaszak Holl, S. Lee, and F. R. McFeely, Appl. Phys. Lett. 65 1097 (1994); (c) S. Lee, S. Makan, M. M. Banaszak Holl, and F. R. McFeely, J. Am. Chem. Soc. 116, 11819 (1994).
  • 11
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    • See Ref. 9(b) and references therein
    • See Ref. 9 (b) and references therein.
  • 13
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    • D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31, 292 (1977); F. Yonezawa, S. Sakamoto, and M. Hori, J. Non-Cryst. Solids 137&138, 135 (1991).
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