Laser-assisted recrystallization to improve the surface morphology of CdTe epitaxial layers

Semiconductor Science and Technology

Volumn 11, Issue 2, 1996, Pages 248-251

  Sochinskii, N V ^a,b,e,f   Dieguez E ^a   Alves, E ^b   Da Silva, M F ^b   Soares, J C ^b   Bernard, S ^c   Garrido, J ^a   Agullo Rueda F ^d  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITY OF LISBON   (Portugal)

^c CREO   (Italy)

^d INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^e INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^f New Semiconductors   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; LASER APPLICATIONS; LASER BEAMS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES;

ARGON ION LASER BEAM; IRRADIATION TIME; LASER ASSISTED RECRYSTALLIZATION; LASER POWER; SPECTROSCOPY ELLIPSOMETRY;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030084113     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/2/018     Document Type: Article

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