Critical issues for developing a high-throughput SCALPEL system for sub-0.18 micron lithography generations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3331, Issue , 1998, Pages 673-688

  Stanton, Stuart T ^a   Liddle, J Alexander ^a   Waskiewicz, Warren K ^a   Mkrtchyan, Masis M ^a   Novembre, Anthony E ^a   Harriott, Lloyd R ^a  

^a Integrated Solutions Inc   (United States)

Author keywords

Critical dimension; Electron beam; Error budget; Lithography; SCALPEL; Space charge; Stitching; Throughput

Indexed keywords

ABERRATIONS; ELECTRIC SPACE CHARGE; ELECTRON SCATTERING; IMAGING SYSTEMS; MASKS;

PROJECTION IMAGING SYSTEMS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0032402746     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.309631     Document Type: Conference Paper

References (14)

1. SCALPEL proof-of-concept system: Preliminary lithography results
2. Continuous writing method for high speed electron-beam direct writing system HL-800D
3. New approach to projection-electron lithography with demonstrated 0.1μm linewidth
4. Analysis of off-axis shaped beam systems for high throughput electron beam lithography
5. Stochastic scattering in charged particle projection systems: A nearest neighbor approach
6. Electron-Optics method for high-throughput in a SCALPEL system: Preliminary analysis
7. The electron-beam and x-ray lithographic performance of the high resolution CAMP and ARCH family of chemically amplified resists
8. Measurement of the back-scatter coefficient using response curves for 20-100 keV electron beam lithography on Si
9. Seamless stitching for large area integrated circuit manufacturing
10. Managing lithography errors
11. Error budget analysis of the SCALPEL mask for sub-0.2 μm lithography